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TC51864PL-10 Dataheets PDF



Part Number TC51864PL-10
Manufacturers Toshiba
Logo Toshiba
Description SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet TC51864PL-10 DatasheetTC51864PL-10 Datasheet (PDF)

TOSHIBA SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM 1l:51864PL/FL~5/10 PRELIMINARY Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51864PL operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of refr.

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TOSHIBA SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM 1l:51864PL/FL~5/10 PRELIMINARY Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51864PL operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC51864PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC51864PL is available in a 32-pin, 0.6 inch width plastic DIP, and a small outline plastic flat package. Features • Organization: 65,536 words x 8 bits • Single 5V power supply • Fast access time TC51864 Family -85 -10 tCEA CE Access Time tOEA OE .


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