1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E2PROM
DESCRIP...
Description
TC58NVG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1G BIT (128M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 1024blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages).
The TC58NVG0S3HBAI6is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-vo...
Similar Datasheet