rOSHIBA
SILICON GATE CMOS
TC51V8512AF/ AFT/ A1R-12/15
PRELIMINARY
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM
Description
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high s~ed and l...
