AQW612EHA

Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation VDE (AQW610EH, 614EH) (AQW612EH) GE 1 Form A & 1 Form B (AQW61❍EH) 9.78 .385 6.4 .252 3.9 .154 9.78 .385 6.4 .252 3.6 .142 mm inch 18 N.C. 27 36 45 N.O. RoHS compliant FEATURES 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B PhotoMOS 4. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 5. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 6. High sensitivity and high speed response Can control max. 0.14 A load current with 5 mA input current. Fast operation speed of typ. ...