N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4NM65
4A, 650V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM65 is a Super Ju...
Description
UNISONIC TECHNOLOGIES CO., LTD
4NM65
4A, 650V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 4NM65 is a Super Junction MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
FEATURES
* RDS(ON) ≤1.4Ω @ VGS=10V, ID=2.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
Power MOSFET
11
TO-251
TO-220F
1 TO-220F1
1 TO-251S
1 TO-252
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4NM65L-TF3-T
4NM65G-TF3-T
4NM65L-TF1-T
4NM65G-TF1-T
4NM65L-TM3-T
4NM65G-TM3-T
4NM65L-TMS-T
4NM65G-TMS-T
4NM65L-TN3-R
4NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F TO-220F1
TO-251 TO-251S TO-252
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
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1 of 9
QW-R205-331.B
4NM65
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R205-331.B
4NM65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 650 V
Gate-Source Voltage
VGSS ±30 V
Drain Current
Continuous Pulsed (No...
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