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UNISONIC TECHNOLOGIES CO., LTD 15NM60-U2
15A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 15NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 0.38Ω @ VGS=10V, ID=7.5A * Super Junction Structure * Fast Switching * With 100% Avalanche Tested
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15NM60L-TA3-T
15NM60G-TA3-T
15NM60L-TF3-T
15NM60G-TF3-T
15NM60L-TF1-T
15NM60G-TF1-T
15NM60L-TW1-T
15NM60G-TW1-T
15NM60L-TM3-T
15NM60G-TM3-T
15NM60L-TN3-R
15NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220WF TO-251 TO-252
Pin Assignment 123 GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tape Reel
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QW-R205-308.E
15NM60-U2
MARKING
Power MOSFET
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QW-R205-308.E
15NM60-U2
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage Continuous Drain Current
Continuous
VGSS ID
±30 15
V A
Pulsed Drain Current
Pulsed (Note 2)
IDM
45
A
Avalanche Current (Note 3)
IAR 3.1 A
Avalanche energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS dv/dt
490 mJ 7.5 V/nS
TO-220
83 W
Power Dissipation
TO-220F/TO-220F1 TO-220WF
PD
31 W
TO-251/TO-252
62 W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=102mH, IAS=3.1A, VDD=50V, RG=25Ω, Starting TJ = 25°C. 4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
TO-220/TO-220F TO-220F1/TO-220WF TO-251/TO-252
θJA
62.5 110
TO-220
1.5
Junction to Case
TO-220F/TO-220F1 TO-220WF
θJC
4
TO-251/TO-252 (Note)
2.02
Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
UNIT °C/W °C/W °C/W °C/W °C/W
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QW-R205-308.E
15NM60-U2
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Reverse
BVDSS IDSS
IGSS
VGS=0V, ID=250µA VDS=600V, VGS=0V VDS=0V ,VGS=+30V VDS=0V ,VGS=-30V
600 V 10 µA
+100 nA -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS= VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance Output Capacitance
CISS COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1) Gate to Source Charge Gate to Drain Charge
QG QGS QGD
VDS=100V, VGS=10V, ID=15A IG=1mA (Note 1, 2)
Turn-on Delay Time (Note 1)
tD(ON)
Rise Time Turn-off Delay Time
tR tD(OFF)
VDD=100V, VGS=10V, ID=15A, RG=25Ω (Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Pulsed Current
IS
Drain-Source Diode Forward Voltage (Note 1)
ISM
Maximum Body-Diode Continuous Current
VSD IS =15A, VGS=0V
Reverse Recovery Time (Note 1) Reverse Recovery Charge
trr IS =15A, VGS=0V, Qrr dIF/dt=100A/µs
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
2.5
4.5 0.38
920 700 68
35 9 15 15 26 100 40
15 45 1.4 385 5.8
V Ω
pF pF pF
nC nC nC ns ns ns ns
A A V ns µC
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QW-R205-308.E
15NM60-U2
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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15NM60-U2
TEST CIRCUITS AND WAVEFORMS
VDS 90%
Power MOSFET
Switching Test Circuit
10% VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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QW-R205-308.E
15NM60-U2
TYP.