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15NM60-U2 Dataheets PDF



Part Number 15NM60-U2
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 15NM60-U2 Datasheet15NM60-U2 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 15NM60-U2 15A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 15NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 0.38Ω @ VGS=10V, ID=7.5A * Super Junction Structure * Fast Switching * With 100.

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UNISONIC TECHNOLOGIES CO., LTD 15NM60-U2 15A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 15NM60-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converters for power applications.  FEATURES * RDS(ON) < 0.38Ω @ VGS=10V, ID=7.5A * Super Junction Structure * Fast Switching * With 100% Avalanche Tested  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 15NM60L-TA3-T 15NM60G-TA3-T 15NM60L-TF3-T 15NM60G-TF3-T 15NM60L-TF1-T 15NM60G-TF1-T 15NM60L-TW1-T 15NM60G-TW1-T 15NM60L-TM3-T 15NM60G-TM3-T 15NM60L-TN3-R 15NM60G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220WF TO-251 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 10 QW-R205-308.E 15NM60-U2  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 10 QW-R205-308.E 15NM60-U2 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Continuous Drain Current Continuous VGSS ID ±30 15 V A Pulsed Drain Current Pulsed (Note 2) IDM 45 A Avalanche Current (Note 3) IAR 3.1 A Avalanche energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 490 mJ 7.5 V/nS TO-220 83 W Power Dissipation TO-220F/TO-220F1 TO-220WF PD 31 W TO-251/TO-252 62 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=102mH, IAS=3.1A, VDD=50V, RG=25Ω, Starting TJ = 25°C. 4. ISD ≤15A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.  THERMAL DATA PARAMETER SYMBOL RATINGS Junction to Ambient TO-220/TO-220F TO-220F1/TO-220WF TO-251/TO-252 θJA 62.5 110 TO-220 1.5 Junction to Case TO-220F/TO-220F1 TO-220WF θJC 4 TO-251/TO-252 (Note) 2.02 Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. UNIT °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 10 QW-R205-308.E 15NM60-U2 Power MOSFET  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=600V, VGS=0V VDS=0V ,VGS=+30V VDS=0V ,VGS=-30V 600 V 10 µA +100 nA -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=7.5A DYNAMIC PARAMETERS Input Capacitance Output Capacitance CISS COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 1) Gate to Source Charge Gate to Drain Charge QG QGS QGD VDS=100V, VGS=10V, ID=15A IG=1mA (Note 1, 2) Turn-on Delay Time (Note 1) tD(ON) Rise Time Turn-off Delay Time tR tD(OFF) VDD=100V, VGS=10V, ID=15A, RG=25Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Pulsed Current IS Drain-Source Diode Forward Voltage (Note 1) ISM Maximum Body-Diode Continuous Current VSD IS =15A, VGS=0V Reverse Recovery Time (Note 1) Reverse Recovery Charge trr IS =15A, VGS=0V, Qrr dIF/dt=100A/µs Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 2.5 4.5 0.38 920 700 68 35 9 15 15 26 100 40 15 45 1.4 385 5.8 V Ω pF pF pF nC nC nC ns ns ns ns A A V ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 10 QW-R205-308.E 15NM60-U2  TEST CIRCUITS AND WAVEFORMS Power MOSFET VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 10 QW-R205-308.E 15NM60-U2  TEST CIRCUITS AND WAVEFORMS VDS 90% Power MOSFET Switching Test Circuit 10% VGS tD(ON) tR tD(OFF) tF Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 10 QW-R205-308.E 15NM60-U2  TYP.


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