Document
UNISONIC TECHNOLOGIES CO., LTD 11NM60
11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11NM60 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance.
The UTC 11NM60 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) ≤ 0.42 Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested
SYMBOL
Power MOSFET
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1 of 9
QW-R209-040.L
11NM60
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM60L-TA3-T
11NM60G-TA3-T
11NM60L-TF1-T
11NM60G-TF1-T
11NM60L-TF3-T
11NM60G-TF3-T
11NM60L-TF3-T
11NM60G-TF3-T
11NM60L-TM3-T
11NM60G-TM3-T
11NM60L-TN3-R
11NM60G-TN3-R
11NM60L-T2Q-T
11NM60G-T2Q-T
11NM60L-TQ2-T
11NM60G-TQ2-T
11NM60L-TQ2-R
11NM60G-TQ2-R
11NM60L-T47-T
11NM60G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F1 TO-220F2 TO-220F
TO-251 TO-252 TO-262 TO-263 TO-263 TO-247
Power MOSFET
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube Tube Tube Tube Tube Tape Reel Tube Tube Tape Reel Tube
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R209-040.L
11NM60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current Continuous
Pulsed Drain Current
Pulsed (Note 3)
Avalanche Current (Note 3)
Single Pulsed Avalanche Energy(Note 4)
Peak Diode Recovery dv/dt (Note 5)
VDSS VGSS
ID IDM IAR EAS dv/dt
600 ±30 11 (Note 2) 44 (Note 2) 2.4 452 5.0
V V A A A mJ V/ns
TO-220/TO-262 TO-263
92
W
Power Dissipation
TO-220F/TO-220F1 TO-220F2
PD
30
W
TO-251/TO-252
60
W
TO-247
100
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature.
3. Repetitive Rating: Pulse width limited by maximum junction temperature.
4. L = 157mH, IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C. 5. ISD ≤ 11A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
TO-220/TO-220F
TO-220F1/TO-220F2
62.5
Junction to Ambient
TO-262/TO-263
θJA
TO-251/TO-252
110
TO-247
40
TO-220/TO-262 TO-263
1.35
Junction to Case
TO-220F/TO-220F1 TO-220F2
θJC
4.16
TO-251/TO-252
2.08 (Note)
TO-247
1.25
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
UNIT
°C/W
°C/W °C/W °C/W
°C/W °C/W °C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R209-040.L
11NM60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
600
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
10 µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±30V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS= VGS, ID=250µA
2.5
4.5 V
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=5.5A
0.42 Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
595
pF
Output Capacitance
COSS VDS=25V,VGS=0V, f=1.0MHz
600
pF
Reverse Transfer Capacitance
CRSS
39
pF
SWITCHING PARAMETERS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
QG QGS QGD
VDS=480V, VGS=10V, ID=11A , IG=1mA (Note 1, 2)
28 4.5 9
nC nC nC
Turn-ON Delay Time
tD(ON)
11
ns
Turn-ON Rise Time Turn-OFF Delay Time
tR
VDD=100V, VGS=10V, ID=11A,
24
ns
tD(OFF) RG=25Ω (Note 1, 2)
130
ns
Turn-OFF Fall Time
tF
50
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
11 A
Maximum Body-Diode Pulsed Current
ISM
44 A
Drain-Source Diode Forward Voltage
VSD
IS =11A, VGS=0V
1.4 V
Reverse Recovery Time Reverse Recovery Charge
trr
IS=11A, VGS=0V
Qrr
di/dt=200A/μs (Note 1)
350
ns
5
μC
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R209-040.L
11NM60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt VDD
Body Diode
Forward Voltage Drop
Pe.