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11NM60 Dataheets PDF



Part Number 11NM60
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 11NM60 Datasheet11NM60 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 11NM60 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM60 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM60 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) ≤ 0.42 Ω @ VGS=10V.

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UNISONIC TECHNOLOGIES CO., LTD 11NM60 11A, 600V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 11NM60 is an Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 11NM60 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc.  FEATURES * RDS(ON) ≤ 0.42 Ω @ VGS=10V, ID=5.5A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 9 QW-R209-040.L 11NM60  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11NM60L-TA3-T 11NM60G-TA3-T 11NM60L-TF1-T 11NM60G-TF1-T 11NM60L-TF3-T 11NM60G-TF3-T 11NM60L-TF3-T 11NM60G-TF3-T 11NM60L-TM3-T 11NM60G-TM3-T 11NM60L-TN3-R 11NM60G-TN3-R 11NM60L-T2Q-T 11NM60G-T2Q-T 11NM60L-TQ2-T 11NM60G-TQ2-T 11NM60L-TQ2-R 11NM60G-TQ2-R 11NM60L-T47-T 11NM60G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 TO-262 TO-263 TO-263 TO-247 Power MOSFET Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Tube Tape Reel Tube  MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R209-040.L 11NM60 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Continuous Pulsed Drain Current Pulsed (Note 3) Avalanche Current (Note 3) Single Pulsed Avalanche Energy(Note 4) Peak Diode Recovery dv/dt (Note 5) VDSS VGSS ID IDM IAR EAS dv/dt 600 ±30 11 (Note 2) 44 (Note 2) 2.4 452 5.0 V V A A A mJ V/ns TO-220/TO-262 TO-263 92 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 30 W TO-251/TO-252 60 W TO-247 100 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. 4. L = 157mH, IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C. 5. ISD ≤ 11A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C.  THERMAL DATA PARAMETER SYMBOL RATINGS TO-220/TO-220F TO-220F1/TO-220F2 62.5 Junction to Ambient TO-262/TO-263 θJA TO-251/TO-252 110 TO-247 40 TO-220/TO-262 TO-263 1.35 Junction to Case TO-220F/TO-220F1 TO-220F2 θJC 4.16 TO-251/TO-252 2.08 (Note) TO-247 1.25 Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. UNIT °C/W °C/W °C/W °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 9 QW-R209-040.L 11NM60 Power MOSFET  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V 10 µA Gate-Source Leakage Current IGSS VDS=0V ,VGS=±30V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS= VGS, ID=250µA 2.5 4.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.5A 0.42 Ω DYNAMIC PARAMETERS Input Capacitance CISS 595 pF Output Capacitance COSS VDS=25V,VGS=0V, f=1.0MHz 600 pF Reverse Transfer Capacitance CRSS 39 pF SWITCHING PARAMETERS Total Gate Charge Gate-Source Charge Gate-Drain Charge QG QGS QGD VDS=480V, VGS=10V, ID=11A , IG=1mA (Note 1, 2) 28 4.5 9 nC nC nC Turn-ON Delay Time tD(ON) 11 ns Turn-ON Rise Time Turn-OFF Delay Time tR VDD=100V, VGS=10V, ID=11A, 24 ns tD(OFF) RG=25Ω (Note 1, 2) 130 ns Turn-OFF Fall Time tF 50 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 11 A Maximum Body-Diode Pulsed Current ISM 44 A Drain-Source Diode Forward Voltage VSD IS =11A, VGS=0V 1.4 V Reverse Recovery Time Reverse Recovery Charge trr IS=11A, VGS=0V Qrr di/dt=200A/μs (Note 1) 350 ns 5 μC Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 9 QW-R209-040.L 11NM60  TEST CIRCUITS AND WAVEFORMS Power MOSFET VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Pe.


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