Document
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
N-channel 600 V, 0.26 Ω typ., 13 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
Order codes
VDSS (@Tjmax)
RDS(on) max.
ID PTOT
STB18NM60N STF18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
TAB
3 1
D²PAK
TAB
3 2 1
TO-220
3 2 1
TO-220FP
3 2 1
TO-247
Applications
■ Switching applications
Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
$ 4!" '
3
Table 1. Device summary Order codes STB18NM60N STF18NM60N STP18NM60N STW18NM60N
Marking 18NM60N 18NM60N 18NM60N 18NM60N
Package D²PAK
TO-220FP TO-220 TO-247
!-V
Packaging Tape and reel
Tube Tube Tube
October 2012
This is information on a product in full production.
Doc ID 15868 Rev 4
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www.st.com
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Contents
Contents
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
........................... 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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Doc ID 15868 Rev 4
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, TO-220,TO-247
TO-220FP
Unit
VDS VGS ID ID IDM (2) PTOT
IAR
EAS dv/dt(3)
Drain-source voltage
Gate- source voltage
Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed)
Total dissipation at TC = 25 °C Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) Peak diode recovery voltage slope
600 ± 25 13 8.2 52 110
13 (1) 8.2 (1) 52 (1)
30
4.5
350 15
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t=1 s;TC=25 °C)
2500
TJ Operating junction temperature Tstg Storage temperature
1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 13 A, di/dt ≤400 A/µs, VDD ≤80 % V(BR)DSS, VDS(peak) ≤V(BR)DSS
-55 to 150
V
A A A W A
mJ V/ns
V
°C
Table 3. Symbol
Thermal data Parameter
D²PAK TO-220 TO-247 TO-220FP Unit
Rthj-case Thermal resistance junction-case max
1.14
Rthj-amb Thermal resistance junction-amb max
62.5
50
Rthj-pcb(1) Thermal resistance junction-pcb max
30
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
4.17 62.5
°C/W
Doc ID 15868 Rev 4
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Electrical characteristics
STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
2
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. Symbol
On/off states Parameter
Test conditions
V(BR)DSS
Drain-source breakdown voltage
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current (VGS = 0)
Gate body leakage current (VDS = 0) Gate threshold voltage
Static drain-source onresistance
ID = 1 mA, VGS= 0 VDS = 600 V VDS = 600 V, TJ=125 °C VGS = ±25 V VDS= VGS, ID = 250 µA VGS= 10 V, ID=6.5 A
Min. Typ. Max. Unit
600
V
1 µA 10 µA
±100 nA
2
3
4
V
0.260 0.285 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss Coss Crss
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 50 V, f =1 MHz, VGS = 0
1000
pF
-
60
-
pF
3
pF
Coss
(1) eq.
Output equivalent capacitance
VDS = 0, to 480 V, VGS=0
- 225 -
pF
Rg Intrinsic resistance
f=1 MHz open drain
-
3.5
-
Ω
Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge
VDD = 480 V, ID = 13 A VGS = 10 V (see Figure 19)
35
nC
-
6
-
nC
20
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS.
Table 6. Symbol
Switching times Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Test conditions
VDD = 300 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18)
Min. Typ. Max. Unit
12
ns
15
ns
-
-
55
ns
25
ns
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