GT50N324

Discrete IGBTs Silicon N-Channel IGBT GT50N324 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ.) (IC = 60 A) FRD trr = 0.8 µs (typ.) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 60 A) (5) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50N324 TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2019-11-18 Rev.2.0 GT50N324 4. Absolute Maximum Ratings (Note) (Ta = 25 , unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1000 V Gate-emitter voltage VGES ±25 V Collector current (DC) IC 50 A Collector current (1 ms) ICP 120 A Diode forward current (DC) IF 15 A Diode forward current (1 ms) IFP 120 A Collector power dissipation (Tc = 25 ) PC 150 W Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absol...