NIKO-SEM
N-Channel Enhancement Mode
P0603BKE
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SU...
NIKO-SEM
N-Channel Enhancement Mode
P0603BKE
Field Effect
Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ
ID 65A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current2
TC = 100 °C TA = 25 °C
Pulsed Drain Current1
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
TC = 25 °C
Power Dissipation
TC = 100 °C TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VDS VGS
ID
IDM IAS EAS
PD
Tj, Tstg
G : GATE D : DRAIN S : SOURCE
LIMITS 30 ±20 65 41 15 12 180 35 63 41 16 2.2 1.4
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient3 Junction-to-Case
RθJA RθJC
55 °C / W
3
1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. 3The value of RθJA is meas...