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P0603BKE

NIKO-SEM

N-Channel FET

NIKO-SEM N-Channel Enhancement Mode P0603BKE Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SU...


NIKO-SEM

P0603BKE

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NIKO-SEM N-Channel Enhancement Mode P0603BKE Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.8mΩ ID 65A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current2 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg G : GATE D : DRAIN S : SOURCE LIMITS 30 ±20 65 41 15 12 180 35 63 41 16 2.2 1.4 -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 Junction-to-Case RθJA RθJC 55 °C / W 3 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. 3The value of RθJA is meas...




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