Power MOSFET
UT6J3
-20V Pch+Pch Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 85mΩ ±3A
2W
lFeatures
1) Low on - resistance 2) Small...
Description
UT6J3
-20V Pch+Pch Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 85mΩ ±3A
2W
lFeatures
1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free plating ; RoHS compliant 4) Halogen Free
lOutline
DFN2020-8D
HUML2020L8
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
lApplication
Reel size (mm)
180
Switching
Type Tape width (mm) Quantity (pcs)
8 3000
Taping code
TCR
Marking
J03
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±3 A
Pulsed drain current
IDP*2 ±12 A
Gate - Source voltage
VGSS
0 to -8
V
Avalanche current, single pulse
IAS*3 -3 A
Avalanche energy, single pulse
EAS*3
0.6 mJ
Power dissipation
PD*4 2 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20191125 - Rev.003
UT6J3
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol RthJA*4
Values Min. Typ. Max.
- - 62.5
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
Breakdown voltage temperature coefficient
Zero gate voltage drain current ...
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