Document
RSQ015P10FRA
Pch -100V -1.5A Small Signal MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
-100V 470mΩ ±1.5A 1.25W
lFeatures
1) Low on - resistance 2) Small Surface Mount Package (TSMT6) 3) Pb-free lead plating ; RoHS compliant 4) AEC-Q101 Qualified
lOutline
SOT-457T
SC-95
TSMT6
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
180
lApplication Switching
Type Tape width (mm) Basic ordering unit (pcs)
8 3000
Taping code
TR
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
ZN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-100 V
Continuous drain current
ID ±1.5 A
Pulsed drain current
IDP*1 ±6.0 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*2 1.25 W PD*3 0.95 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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1/11
20180328 - Rev.001
RSQ015P10FRA
lThermal resistance
Parameter
Thermal resistance, junction - ambient
Datasheet
Symbol
RthJA*2 RthJA*3
Values Min. Typ. Max.
- - 100 - - 132
Unit
℃/W ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = -1mA
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID = -1mA ΔTj referenced to 25℃
Zero gate voltage drain current
IDSS VDS = -100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage temperature coefficient
VGS(th) VDS = -10V, ID = -1mA ΔVGS(th) ID = -1mA ΔTj referenced to 25℃
Static drain - source on - state resistance
VGS = -10V, ID = -1.5A RDS(on)*4 VGS = -4.5V, ID = -0.75A
VGS = -4.0V, ID = -0.75A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer Admittance
|Yfs|*4 VDS = -10V, ID = -1.5A
Values Unit
Min. Typ. Max. -100 - - V
- -91.3 - mV/℃
- - -1 μA
- - ±10 μA -1.0 - -2.5 V
- 3.0 - mV/℃
- 350 470
- 380 510 mΩ
- 400 540
- 8.2 -
Ω
1.5 - - S
*1 Pw≦10μs , Duty cycle≦1% *2 Mounted on a ceramic board (30×30×0.8mm) *3 Mounted on a FR4 (25×25×0.8mm) *4 Pulsed
www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved.
2/11
20180328 - Rev.001
RSQ015P10FRA
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4
VGS = 0V VDS = -25V f = 1MHz
VDD ⋍ -50V,VGS = -10V
ID = -0.75A RL ⋍ 66Ω RG = 10Ω
Values Min. Typ. Max.
- 950 - 45 - 20 - 10 - 15 - 60 - 10 -
Unit pF ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge
Qg*4 Qgs*4 Qgd*4
VDD ⋍ -50V, ID = -1.5A, VGS = -5.0V
Values Min. Typ. Max.
- 17.0 - 4.5 - 5.0 -
Unit nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Continuous forward current Pulse forward current Forward voltage
Symbol
Conditions
IS ISP*1 VSD*4
Ta = 25℃ VGS = 0V, IS = -1.5A
Min. -
Values Typ.
-
Max. -1.0 -6.0 -1.2
Unit
A A V
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3/11
20180328 - Rev.001
RSQ015P10FRA
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power dissipation
www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved.
4/11
20180328 - Rev.001
RSQ015P10FRA
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown.