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RSD175N10FRA Dataheets PDF



Part Number RSD175N10FRA
Manufacturers ROHM
Logo ROHM
Description Power MOSFET
Datasheet RSD175N10FRA DatasheetRSD175N10FRA Datasheet (PDF)

RSD175N10FRA    Nch 100V 17.5A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 100V 105mΩ ±17.5A 20W lFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified lOutline TO-252 SC-63 CPT3          lInner circuit   lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping c.

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RSD175N10FRA    Nch 100V 17.5A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 100V 105mΩ ±17.5A 20W lFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified lOutline TO-252 SC-63 CPT3          lInner circuit   lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Type Tape width (mm) Basic ordering unit (pcs) 16 2500 Taping code TL Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) 175N10 Parameter Symbol Value Unit Drain - Source voltage VDSS 100 V Continuous drain current ID*1 ±17.5 A Pulsed drain current IDP*2 ±35 A Gate - Source voltage VGSS ±20 V Power dissipation PD*3 20 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                                                                         www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170706 - Rev.001     RSD175N10FRA            lThermal resistance Parameter Thermal resistance, junction - case                 Datasheet                      Symbol RthJC*3 Values Min. Typ. Max. - - 6.25 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient  ΔV(BR)DSS  ID = 1mA    ΔTj     referenced to 25℃ Zero gate voltage drain current IDSS VDS = 100V, VGS = 0V Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = 10V , ID = 1mA  ΔVGS(th)   ID = 1mA    ΔTj     referenced to 25℃ Static drain - source on - state resistance VGS = 10V, ID = 8.8A RDS(on)*4 VGS = 4.5V, ID = 8.8A VGS = 4V, ID = 8.8A Gate resistance RG f = 1MHz, open drain Forward Transfer Admittance |Yfs|*4 VDS = 10V, ID = 8.8A Values Unit Min. Typ. Max. 100 - - V - 116.9 - mV/℃ - - 1 μA - - ±10 μA 1.0 - 2.5 V - -3.6 - mV/℃ - 75 105 - 80 112 mΩ - 85 119 - 6.0 - Ω 5 - -S *1 Limited only by maximum temperature allowed. *2 Pw≦10μs , Duty cycle≦1% *3 TC=25℃ *4 Pulsed                                               www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 2/11                                            20170706 - Rev.001 RSD175N10FRA        lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4 VGS = 0V VDS = 25V f = 1MHz VDD ⋍ 50V,VGS = 10V ID = 8.8A RL ⋍ 5.7Ω RG = 10Ω          Datasheet Values Min. Typ. Max. - 950 - 85 - 55 - 10 - 25 - 60 - 50 - Unit pF ns lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Qg*4 Qgs*4 Qgd*4 VDD ⋍ 50V, ID = 17.5A, VGS = 10V Values Min. Typ. Max. - 24 -3-6- Unit nC lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Continuous forward current Pulse forward current Forward voltage Symbol Conditions IS*1 ISP*2 VSD*4 Ta = 25℃ VGS = 0V, IS = 17.5A Min. - Values Typ. - Max. 17.5 35 1.5 Unit A A V                                                                                            www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 3/11 20170706 - Rev.001 RSD175N10FRA        lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve          Datasheet Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal     Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power     dissipation                                                                                            www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. 4/11 20170706 - Rev.001 RSD175N10FRA        lElectrical characteristic curves Fig.5 Typical Output Characteristics(I)          Datasheet Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs.      Junction Temperature         .


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