Document
RSD175N10FRA
Nch 100V 17.5A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
100V 105mΩ ±17.5A
20W
lFeatures
1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified
lOutline
TO-252
SC-63
CPT3
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Basic ordering unit (pcs)
16 2500
Taping code
TL
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
175N10
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
100 V
Continuous drain current
ID*1
±17.5
A
Pulsed drain current
IDP*2 ±35 A
Gate - Source voltage
VGSS
±20 V
Power dissipation
PD*3 20 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
1/11
20170706 - Rev.001
RSD175N10FRA
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol RthJC*3
Values Min. Typ. Max.
- - 6.25
Unit ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Breakdown voltage temperature coefficient
ΔV(BR)DSS ID = 1mA ΔTj referenced to 25℃
Zero gate voltage drain current
IDSS VDS = 100V, VGS = 0V
Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V
Gate threshold voltage
Gate threshold voltage temperature coefficient
VGS(th) VDS = 10V , ID = 1mA ΔVGS(th) ID = 1mA ΔTj referenced to 25℃
Static drain - source on - state resistance
VGS = 10V, ID = 8.8A RDS(on)*4 VGS = 4.5V, ID = 8.8A
VGS = 4V, ID = 8.8A
Gate resistance
RG f = 1MHz, open drain
Forward Transfer Admittance
|Yfs|*4 VDS = 10V, ID = 8.8A
Values Unit
Min. Typ. Max. 100 - - V
- 116.9 - mV/℃
- - 1 μA
- - ±10 μA 1.0 - 2.5 V
- -3.6 - mV/℃
- 75 105
- 80 112 mΩ
- 85 119
- 6.0 -
Ω
5 - -S
*1 Limited only by maximum temperature allowed. *2 Pw≦10μs , Duty cycle≦1% *3 TC=25℃ *4 Pulsed
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
2/11
20170706 - Rev.001
RSD175N10FRA
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time
Ciss Coss Crss td(on)*4 tr*4 td(off)*4 tf*4
VGS = 0V VDS = 25V f = 1MHz
VDD ⋍ 50V,VGS = 10V
ID = 8.8A RL ⋍ 5.7Ω RG = 10Ω
Datasheet
Values Min. Typ. Max.
- 950 - 85 - 55 - 10 - 25 - 60 - 50 -
Unit pF ns
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge
Qg*4 Qgs*4 Qgd*4
VDD ⋍ 50V, ID = 17.5A, VGS = 10V
Values Min. Typ. Max.
- 24 -3-6-
Unit nC
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Continuous forward current Pulse forward current Forward voltage
Symbol
Conditions
IS*1 ISP*2 VSD*4
Ta = 25℃ VGS = 0V, IS = 17.5A
Min. -
Values Typ.
-
Max. 17.5 35 1.5
Unit
A A V
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3/11
20170706 - Rev.001
RSD175N10FRA
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Datasheet
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power dissipation
www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved.
4/11
20170706 - Rev.001
RSD175N10FRA
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction Temperature
.