RSJ650N10FRA

4V Drive Nch MOSFET RSJ650N10 FRA z Structure Silicon N-channel MOSFET zFeatures 1) Low on-resistance. 2) High power package. 3) 4V drive. Data Sheet AEC-Q101 Qualified z Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 13.1 9.0 1.0 3.0 1.24 2.54 0.78 5.08 (1) (2) (3) 0.4 2.7 1.2 z Application Switching z Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ650N10 FRA Taping TL 1000 { z Absolute maximum ratings (Ta = 25qC) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch Tstg 100 r20 r65 r130 65 130 100 150 55 to 150 *1 PWd10Ps, Duty cycled1% *2 TC=25°C *3 Please use within the range of SOA. Unit V V A A A A W qC qC z Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) ᰛ1 ESD PROTECTION DIODE ᰛ2 BODY DIODE z Therma...