RSJ550N10

4V Drive Nch MOSFET RSJ550N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive. Data Sheet  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 13.1 9.0 1.0 3.0 1.24 2.54 0.78 5.08 (1) (2) (3) 0.4 2.7 1.2  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSJ550N10 Taping TL 1000   Inner circuit ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch Tstg 100 20 55 110 55 110 100 150 55 to 150 *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA. Unit V V A A A A W C C  Thermal resistance Parameter Channel to Case * TC=25°C Symbol Rth (ch-c)* Li...