MOSFET
4V Drive Nch MOSFET
RSJ550N10FRA
z Structure Silicon N-channel MOSFET
zFeatures 1) Low on-resistance. 2) High Power Pack...
Description
4V Drive Nch MOSFET
RSJ550N10FRA
z Structure Silicon N-channel MOSFET
zFeatures 1) Low on-resistance. 2) High Power Package. 3) 4V drive.
Data Sheet
AEC-Q101 Qualified
z Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
13.1 9.0
1.0
3.0
1.24
2.54 0.78 5.08
(1) (2) (3)
0.4 2.7
1.2
z Application Switching
z Packaging specifications Package
Type Code Basic ordering unit (pieces)
RSJ550N10 FRA
Taping TL
1000 {
z Inner circuit
∗1 ∗2
z Absolute maximum ratings (Ta = 25qC)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS VGSS
ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch Tstg
100 r20 r55 r110 55 110 100 150 55 to 150
*1 PWd10Ps, Duty cycled1% *2 TC=25°C *3 Please use within the range of SOA.
Unit V V A A A A W qC qC
(1) Gate (2) Drain (3) Source
(1) (2) (3)
1 ESD PROTECTION DIODE 2 BODY DIODE
z Thermal res...
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