MOSFET
Data Sheet
4V Drive Nch MOSFET
RSD175N10
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 4) 4V dri...
Description
Data Sheet
4V Drive Nch MOSFET
RSD175N10
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 4) 4V drive. 4) High power package.
Application Switching
Dimensions (Unit : mm)
CPT3
(SC-63)
6.5 5.1
2.3 0.5
0.9 5.5 1.5
0.75
0.9 2.3
(1) (2)
0.65 (3) 2.3
0.8Min. 2.5
0.5 1.0
1.5 9.5
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RSD175N10
Taping TL
2500
Inner circuit
∗1
∗2
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage Gate-source voltage
Drain current
Source current (Body Diode) Power dissipation Channel temperature
Continuous Pulsed Continuous Pulsed
VDSS VGSS
ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch
Range of storage temperature
Tstg
Limits 100 20 17.5 35 17.5 35 20 150
55 to 150
*1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.
Unit V V A A A A W C C
Thermal resistance Parameter
Channel to Case
* T...
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