RSD160P05

Data Sheet 4V Drive Pch MOSFET RSD160P05 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy.  Application Switching  Dimensions (Unit : mm) CPT3 (SC-63)  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD160P05 Taping TL 2500 ○  Inner circuit ∗1 ∗2 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Tstg *1 Pw≤10s, Duty cycle≤1% *2 Tc=25C Limits 45 20 16 32 16 32 20 150 55 to 150 Unit V V A A A A W C C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE  Thermal resistance Parameter Channel to Case * Tc=25...