RSD080N06FRA

4V Drive Nch MOSFET RRSSDD008800NN0066FRA  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) 4V drive. 3) High power package(CPT3).  Application Switching Data Sheet AEC-Q101 Qualified  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.9 5.5 1.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0 1.5 9.5  Packaging specifications Package Type Code Basic ordering unit (pieces) RSSDD008800NN060F6RA Taping TL 2500   Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID IDP *1 IS ISP *1 PD *2 Tch Range of storage temperature Tstg Limits 60 20 8 16 8 16 15 150 55 to 150 *1 Pw10s, Duty cycle1% *2 TC=25C Unit V V A A A A W C C  Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PRO...