Silicon Carbide Power Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature ...
Silicon Carbide Power
Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
Silicon Carbide
SDB05S120
Product Summary
VDC 1200
V
IF 5 A
Qc 20 nC
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
True 2 Lead DPAK (TO-252)
Internal Schematic
MAXIMUM RATINGS
Parameter
Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Peak Repetitive Forward Current
Symbol
VRRM VDC IF IFRM
Non-Repetitive Forward Surge Current
IFSM
Power Dissipation
PD
Operating and Storage Temperature Tj, Tstg
Conditions Tj = 25 °C
TC < 160 °C TC = 125 °C, D = 0.1 TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 us TC = 25 °C
Value 1200 1200
5 30 26
100 115 -55 to +175
Unit V
A
W °C
SDB05S120 Rev 1.4
1/5
July 2011
Silicon Carbide
SDB05S120
T...