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SDP10S120D

SemiSouth

Silicon Carbide Power Schottky Diode


Description
Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 4 Silicon Carbide SDP10S120D Product Summary VDC 1200 V IF 10 A Qc 39 nC K(4) Applications: - Sola...



SemiSouth

SDP10S120D

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