PRELIMINARY
Silicon Carbide Power Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - ...
PRELIMINARY
Silicon Carbide Power
Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
3
Silicon Carbide
SDA10S120
Product Summary
VDC 1200
V
IF 10 A
Qc 40 nC
K(3)
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
TO-220
2 1
K(1) A(2) Internal Schematic
MAXIMUM RATINGS
Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Peak Repetitive Forward Current
Symbol
VRRM VDC IF IFRM
Non-Repetitive Forward Surge Current
IFSM
Power Dissipation
PTOT
Operating and Storage Temperature Tj, Tstg
Conditions Tj = 25 °C
TC < 145 °C TC < 100 °C TC = 125 °C, D = 0.1 TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 us TC = 25 °C
Value
1200 1200
10 17 50
45
250
136
-55 to +175
Unit V
A
W °C
SDA10S120 Rev 1.3
1/5
Mar...
