SI7112DN

Si7112DN Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.0075 at VGS = 10 V 30 0.0082 at VGS = 4.5 V ID (A) 17.8 17.0 PowerPAK 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3 G 4 Bottom View Ordering Information: Si7112DN-T1-E3 (Lead (Pb)-free) Si7112DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TC = 25 °C TC = 70 °C ID 17.8 14.2 11.3 9.1 Pulsed Drain Current IDM 60 Continuous Source Current (Diode Conduction)a IS 3.2...