RHK005N03FRA

Transistors 4V Drive Nch MOS FET RHK005NN0033FRA RHKR0H0K50N0053NF0R3A AEC-Q101 Qualified zStructure Silicon N-channel MOS FET zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching zPackaging specifications and hFE Package Type Code Basic ordering unit (pieces) RRHHKK000055NN0033FRA Taping T146 3000 zExternal dimensions (Unit : mm) SMT3 2.9 0.4 (3) 1.1 0.8 1.6 2.8 0.3Min. (1)Source (2)Gate (3)Drain (2) (1) 0.95 0.95 1.9 0.15 Each lead has same dimensions Abbreviated symbol : KU zInner circuit (3) (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits 30 ±20 ±500 ±2.0 200 150 −55 to +150 zTher...