Document
NIKO-SEM
N-Channel Enhancement Mode
P0470ED
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.9Ω
ID 4A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM IAS EAS
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
1. GATE 2. DRAIN 3. SOURCE
LIMITS 700 ±30 4 2.4 16 2 20 78 31
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V, L = 10mH ,Starting TJ = 25°C
TYPICAL
MAXIMUM 1.6 62.5
UNITS °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwi.