PW567EA

PW567EA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 520mΩ @VGS = -4.5V ID -0.5A SOT-723 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current2 Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -0.5 -0.4 -1 Power Dissipation TA = 25 °C TA= 70 °C PD 0.25 0.16 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature. 2Limited by package. SYMBOL RqJA TYPICAL MAXIMUM UNITS 500 °C / W Rev 1.0 1 2016/4/7 PW567EA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = -250mA VDS =...