PJ614DA

PJ614DA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 12.5mΩ @VGS = 4.5V ID 9A J-Lead ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current2 Pulsed Drain Current1 TA= 25 °C TA= 70 °C ID IDM 9 7 28 Avalanche Current IAS 22 Avalanche Energy L=0.1mH EAS 24 Power Dissipation TA= 25 °C TA= 70°C PD 1.7 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 7A. SYMBOL RqJA TYPICAL MAXIMUM UNITS 73 °C / W REV 1.4 1 2014/9/1 PJ614DA Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX Drain-Source Bre...