Document
P3710BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID 19A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
19 12 75
Avalanche Current Avalanche Energy2
IAS 15.3 EAS 117
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,L=1mH,VDD=50V
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 4
62.5
UNITS °C / W
REV 1.0
1 2017/1/19
P3710BTF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS UNITS
MIN TYP MAX
.