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P3710BTF Dataheets PDF



Part Number P3710BTF
Manufacturers UNIKC
Logo UNIKC
Description N-Channel MOSFET
Datasheet P3710BTF DatasheetP3710BTF Datasheet (PDF)

P3710BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 19A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 19 12 75 Avalanche Current Avalanche Energy2 IAS 15.3 EAS 117 Power Dissipation TC = 25 °C TC = 100 °C PD 31 12.5 Junction & S.

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P3710BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 19A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 19 12 75 Avalanche Current Avalanche Energy2 IAS 15.3 EAS 117 Power Dissipation TC = 25 °C TC = 100 °C PD 31 12.5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 °C,L=1mH,VDD=50V SYMBOL RqJC RqJA TYPICAL MAXIMUM 4 62.5 UNITS °C / W REV 1.0 1 2017/1/19 P3710BTF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX .


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