P1650GTF

P1650GTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 500V 360mΩ @VGS = 10V ID 16A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 16 10 60 9 410 Power Dissipation TC = 25 °C TC = 100 °C PD 56.8 22.7 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH, starting TJ = 25˚C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.2 62.5 UNITS °C / W REV 1.0 1 2017/1/19 P1650GTF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Not...