P1610ATF

P1610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 110V 16mΩ @VGS = 10V ID 34A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 34 21 120 Avalanche Current IAS 12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Mounting Torque3 Machine Screw 5 0.49 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W Kgf.cm N.m °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Not suggest using Self-Tapping screw. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.6 62.5 UNITS °C / W REV 1.0 1 2017/1/22 P1610ATF N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ...