N-Channel MOSFET
P0470ETF / P0470ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.8Ω @VGS = 10V
ID 4A...
Description
P0470ETF / P0470ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
700V
2.8Ω @VGS = 10V
ID 4A
TO-220F TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3
TC = 25 °C TC = 100 °C
ID
IDM IAS EAS
4 2.6 16 2 20
Power Dissipation
TC = 25 °C TC = 100 °C
PD
54 22
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C. 3VDD = 50V, L = 10mH, starting TJ = 25°C
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.3 62.5
UNITS °C / W
REV 1.0
1 2017/1/23
P0470ETF / P0470ETFS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERIS...
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