P0460CTF-P

P0460CTF-P N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 2.7Ω @VGS = 10V ID 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 , 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 4 2.4 15 2 20 Power Dissipation TC = 25 °C TC = 100 °C PD 24 9.8 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V ,L=10mH. starting TJ = 25 °C . SYMBOL RqJC RqJA TYPICAL MAXIMUM 5.1 62.5 UNITS °C / W REV 1.0 1 2014-3-13 P0460CTF-P N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Un...