P3710BT

P3710BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 37mΩ @VGS = 10V ID 31A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 31 20 75 Avalanche Current Avalanche Energy2 IAS 16 EAS 128 Power Dissipation TC = 25 °C TC = 100 °C PD 78 21 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Starting Tj = 25 °C,L= 1mH,VDD= 50V SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.6 °C / W REV 1.0 1 2017/1/16 P3710BT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Vo...