JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-A Plastic-Encapsulate MOSFETS
CJMPD08 P-Channel Power MOSFET
DFNWB2*2-6L-A
V(BR)DSS
-12V
RDS(on)MAX
60mΩ@-4.5 V 80mΩ@-2.5 V
ID
-3.6 A
General Description The CJMPD08 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. This device is suitable for u...
