CJQ4953

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4953 P-Channel 30-V(D-S) MOSFET V(BR)DSS -30V RDS(on)MAX 60mΩ@-10V  90mΩ@ -4.5V   ID -5A  SOP8 MARKING: Q4953= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding compound device, if none,the normal device. Equivalent Circuit D1 D1 D2 D2 8 76 5 1 23 4 S1 G1 S2 G2 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ( t≤10s) Power Dissipation ( t≤10s) Thermal Resistance from Junction to Ambient ( t≤10s) Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA TJ TSTG Value -30 ±20 -5 1.25 100 150 -55~+150 Unit V A W ℃/W ℃ www.cj-elec.com 1 G,Mar,2016 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta=25 Я unless otherwise specified Parameter Static Drain-source breakdown voltage Gate-threshold voltage Symbol Test Condition V(BR)DSS VGS(th) VGS =0V, ID =-250µA VDS =VG...