CJQ6601

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ6601 N-channel and P-channel Complementary MOSFETS V(BR)DSS 30 V -30V RDS(on)MAX   35mΩ@10V  40mΩ@4.5V  52mΩ@2.5V     65mΩ@-10V  75mΩ@-4.5V  90mΩ@-2.5V   ID 5.8 A -4.2A SOP8 DESCRIPTIONS The Device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. FEATURES  Including a N-ch CJ3400 MOS and a P-ch  Surface mount package CJ3401 MOS (independently) in a package  Low RDS(on) APPLICATIONS  Suitable for a multitude of applications.  High-speed power inverter MARKING: Q6601= Device code Solid dot=Pin1 indicator EQUIVALENT CIRCUIT D1 D1 D2 D2 8 76 5 Solid dot = Green molding compound device, if none, the normal device YY= Code MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 12 34 S1 G1 S2 G2 Symbol Parameter Value N-ch MO...