N-Channel MOSFET
P2003BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID 39A
TO-220
ABSO...
Description
P2003BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID 39A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
39 25 120
Avalanche Current
IAS 21
Avalanche Energy
L = 0.1mH
EAS
22
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.5 50
UNITS °C / W
REV 1.0
1 2014/7/21
P2003BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage...
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