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P1160ZT

Part Number	P1160ZT
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	P1160ZT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 390mΩ @VGS = 10V ID 11A TO-220 A...
Datasheet	P1160ZT PDF File

Overview

P1160ZT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 390mΩ @VGS = 10V ID 11A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 11 7 40 3 180 Power Dissipation TC = 25 °C TC = 100 °C PD 104 41 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction tempe...

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