P0465CT

P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 650V 2.6mΩ @VGS = 10V ID 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 Avalanche Current2 TC= 25 °C TC= 100 °C ID IDM IAS 4 2.5 15 2 Avalanche Energy2 EAS 20 Power Dissipation TC= 25 °C TC= 100°C PD 71 28 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2 VDD=50V ,L=10mH,Starting Tj =25 °C. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.75 °C / W REV 1.0 1 2014-11-13 P0465CT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Vol...