PZ0703ED

PZ0703ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 7.5mΩ @VGS = -10V ID -70A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current2,3 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -70 -44 -160 Avalanche Current IAS -67 Avalanche Energy L=0.1mH EAS 227 Power Dissipation TC= 25 °C TC= 100°C PD 78 31 Junction & Storage Temperature Range Tj, Tstg -55 to 150 ESD Class HBM 4 UNITS V V A mJ W °C KV THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Package limitation current is -60A. SYMBOL RqJC TYPICAL MAXIMUM UNITS 1.6 °C / W REV 1.0 1 2014/4/11 PZ0703ED P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMET...