PD563BA

PD563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -46A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current3 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -46 -29 -130 Avalanche Current IAS -34 Avalanche Energy L = 0.1mH EAS 57.8 Power Dissipation TC= 25 °C TC= 100°C PD 62.5 25 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is -39A. SYMBOL RqJC RqJA TYPICA L MAXIMUM 2 62.5 UNITS °C / W REV 1.0 1 2017/1/13 PD563BA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UN...