PD516BA

PD516BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.5mΩ @VGS = 10V ID 55A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 55 35 150 Avalanche Current IAS 24 Avalanche Energy L=0.1mH EAS 28.7 Power Dissipation TC= 25 °C TC= 100°C PD 39 15 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient RqJA Junction-to-Case 1Pulse width limited by maximum junction temperature. RqJC 2Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 40A. MAXIMUM 62.5 3.2 UNITS °C / W REV 1.0 1 2014/5/15 PD516BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ= 25 °C, U...