PD485BA

PD485BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = 10V ID -43A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -43 -27 -100 Avalanche Current IAS -36 Avalanche Energy L =0.1mH EAS 64.8 Power Dissipation TC = 25 °C TC = 100 °C PD 50 32 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 75 2.5 UNITS °C / W REV 1.0 1 2014-1-14 PD485BA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source ...