PC561BA

PC561BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 45mΩ @VGS = -10V ID -5.7A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -5.7 -4.5 -20 Avalanche Current IAS -12 Avalanche Energy L = 0.1mH EAS 7 Power Dissipation3 TA = 25 °C TA = 70 °C PD 2.5 1.6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA Junction-to-Case Steady-State RqJC 1Pulse width limited by maximum junction temperature. 2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. 3The Power dissipation is based on RqJA t ≦10s value. MAXIMUM UNITS 50 73 °C / W 18 REV 1.0 1 201...