P4004ED

P4004ED P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 40mΩ @VGS = -10V ID -21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 70 °C ID IDM -21 -17 -70 Avalanche Current Avalanche Energy 2 L = 0.1mH IAS EAS -27 36 Power Dissipation TC= 25 °C TC= 70°C PD 30 20 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -20V . Starting TJ = 25°C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 4.1 40 UNITS °C / W REV 1.0 1 2014/5/13 P4004ED P-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIO...