P45N02LDG

P45N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 32 20 110 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 27 Power Dissipation TC = 25 °C TC = 100 °C PD 35 14 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. 2Limited by package, Duty cycle  1%. SYMBOL RqJC RqJA RqCS TYPICAL 0.7 MAXIMUM 3.6 75 UNITS °C / W Ver 1.1 1 2013-3-13 P45N02LDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SY...