128M bits DDR Mobile RAM
PRELIMINARY DATA SHEET
128M bits DDR Mobile RAM
WTR (Wide Temperature Range) EDD12322GBH-TS (4M words × 32 bits)
Spe...
Description
PRELIMINARY DATA SHEET
128M bits DDR Mobile RAM
WTR (Wide Temperature Range) EDD12322GBH-TS (4M words × 32 bits)
Specifications
Density: 128M bits Organization × 32 bits: 1M words × 32 bits × 4 banks Package: 90-ball FBGA Lead-free (RoHS compliant) and Halogen-free Power supply: VDD, VDDQ = 1.7V to 1.95V Data rate: 333Mbps/266Mbps (max.) 1KB page size Row address: A0 to A11 Column address: A0 to A7 Four internal banks for concurrent operation Interface: LVCMOS Burst lengths (BL): 2, 4, 8, 16 Burst type (BT): Sequential (2, 4, 8, 16) Interleave (2, 4, 8, 16) /CAS Latency (CL): 3 Precharge: auto precharge option for each burst
access Driver strength: normal, 1/2, 1/4, 1/8 Refresh: auto-refresh, self-refresh Refresh cycles: 4096 cycles/64ms Average refresh period: 15.6µs Operating ambient temperature range TA = −25°C to +85°C
Features
DLL is not implemented Low power con...
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