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SST26WF016BA Dataheets PDF



Part Number SST26WF016BA
Manufacturers Microchip
Logo Microchip
Description 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory
Datasheet SST26WF016BA DatasheetSST26WF016BA Datasheet (PDF)

SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Proto- col • High Speed Clock Frequency - 104 MHz max • Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around • Superior Reliability - Endurance: 100,000 Cycle.

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Document
SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Proto- col • High Speed Clock Frequency - 104 MHz max • Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around • Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention • Low Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 2.5 μA (typical) • Fast Erase Time - Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max) • Page-Program - 256 Bytes per page in x1 or x4 mode • End-of-Write Detection - Software polling the BUSY bit in status register • Flexible Erase Capability - Uniform 4 KB.


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