Document
SST26WF016B/ SST26WF016BA
1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory
Features
• Single Voltage Read and Write Operations
- 1.65-1.95V
• Serial Interface Architecture
- Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial
command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Proto-
col
• High Speed Clock Frequency
- 104 MHz max
• Burst Modes
- Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 2.5 μA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KB.