EM488M1644VTE

eorex EM488M1644VTE 128Mb (2M×4Bank×16) Synchronous DRAM Features Fully Synchronous to Positive Clock Edge Single 3.3V ±0.3V Power Supply LVTTL Compatible with Multiplexed Address Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page Programmable CAS Latency (C/L) - 2 or 3 Data Mask (DQM) for Read / Write Masking Programmable Wrap Sequence – Sequential (B/L = 1/2/4/8/full Page) – Interleave (B/L = 1/2/4/8) Burst Read with Single-bit Write Operation All Inputs are Sampled at the Rising Edge of the System Clock Auto Refresh and Self Refresh 4,096 Refresh Cycles / 64ms (15.6us) Ordering Information Description The EM488M1644VTE is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Meg words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock. The 128Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate at 3.3V...