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P082ABD8 Dataheets PDF



Part Number P082ABD8
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet P082ABD8 DatasheetP082ABD8 Datasheet (PDF)

P082ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 8mΩ @VGS = 10V ID 52A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 52 33 130 Avalanche Current IAS 23 Avalanche Energy L=0.1mH EAS 76 Power Dissipation TC= 25 °C TC= 100°C PD 36 14 Operating Junction & Storage Temperature Rang.

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P082ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 8mΩ @VGS = 10V ID 52A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 52 33 130 Avalanche Current IAS 23 Avalanche Energy L=0.1mH EAS 76 Power Dissipation TC= 25 °C TC= 100°C PD 36 14 Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJC TYPICAL MAXIMUM 40 3.5 UNITS °C / W REV 1.0 1 2014/4/29 P082ABD8 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC= 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STA.


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